The BS170N is a small signal N-channel Enhancement Mode MOSFET. It is produced using the high cell DMOS technology. It provides reliable, fast switching performance and can be used in small servo motor control, power MOSFET gate drivers, and other switching applications. The BS170N transistor has a continuous drain current of 500mA and a Drain to Source voltage of 60V. It has an on-state resistance of 2.5 ohms and can withstand peak current up to 1200mA.
Product Description of BS170 N-Channel Switching MOSFET
Features of BS170 N-Channel Switching MOSFET
- Fast Switching Speed
- High Input Impedance
- CMOS Logic Compatible Input
- No Thermal Runaway or Secondary Breakdown
- Voltage controlled small signal switch
- Drain-source voltage: max. 60V
- Gate-source voltage: max. 15V
- Drain current (DC): max. 500 mA
- High saturation current capability
- Operating temperature: 55 to +150 °C
Additional Resources
Package Contents
1 x BS170 N-Channel Switching MOSFET
