A metal–oxide–semiconductor field-effect transistor (MOSFET) is a field-effect transistor where the voltage determines the conductivity of the device. It is used for switching or amplifying signals. The ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. A power MOSFET is used where we need to drive a high current load with low in circuit resistance to increase the efficiency of the circuit. IRFP250N-N Channel MOSFET has a low GATE threshold voltage of 4V so you can use your 5V development board with this MOSFET but to fully drive this MOSFET into saturation you need at least 10V applied to the gate terminal. It has a source breakdown voltage of 200V and continuous drain current of 30A. The mosfet features very a low drain to source on-state resistance of 0.085 ohms and a low Rise and fall time of 86ns and 62ns respectively. This allows the mosfet to be used in high efficiency and high-speed switching circuits. It is used to switch high power devices, speed control of motors, LED Dimmers and flashers etc. You can also check STP55NF06 - N Channel MOSFET, IRF540 N-Channel MOSFET etc.

Specifications

• Drain to Source Voltage: 200V
• Gate to Source Voltage: 20V
• Continuous Drain Current: 30A
• Rise Time: 86ns
• Fall Time: 62ns
• Available in TO-220 Package

Product Description

Additional Resources

Datasheet

Package Contents

1× IRFP250N - N Channel MOSFET